Novel Integrated Class F Power Amplifier Design for RF Power Infrastructure Applications
نویسندگان
چکیده
منابع مشابه
High Efficiency Class-F Power Amplifier Design
Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amp...
متن کاملDesign of a Class F Power Amplifier
A Class F power amplifier (PA) at 2.5GHz has been designed and fabricated. Test results show 15.7 dB gain with 75.75% power added efficiency (PAE ), at an input level of 25 dBm. The design procedure is presented, with various issues illustrated and addressed. A new method is proposed to obtain the optimum load and source impedances without iterations, which would usually be necessary.
متن کاملDesign of RF CMOS Power Amplifier for UWB Applications
Ever since the FCC allocated 7.5 GHz (from 3.1 GHz to 10.6 GHz) for ultra wideband (UWB) technology, interest has been renewed in both academic and industrial circles to exploit this vast spectrum for short range, high data rate wireless applications. The great potential of UWB lies in the fact that it can co-exist with the already licensed spectrum users and can still pave the way for a wide r...
متن کاملQuadrature Power Amplifier for RF applications
new power amplifier (PA) architecture is proposed as a more power efficient way to amplify modulated signals at radio-frequencies (RF) compared to conventional polar power amplifiers. Polar PA's, using the Envelope Elimination and Restoration (EER) linearizing technique for high efficiency switch mode amplifiers provide amplification for modulated signals at RF with high efficiency and linearit...
متن کاملRF Electro-Thermal Modeling of LDMOSFETs for Power-Amplifier Design
A new approach for the electro-thermal modeling of LDMOSFETs for power-amplifier design that bypasses pulsed-IVs and pulsed-RF measurements is presented in this paper. The existence of low-frequency dispersion in LDMOSFETs is demonstrated by comparing pulsed IVs with iso-thermal IVs. The modeling technique uses iso-thermal IV and microwave measurements to obtain the temperature dependence of sm...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Access
سال: 2018
ISSN: 2169-3536
DOI: 10.1109/access.2018.2881685